From "reverse-searching with imported part numbers" to "validating with domestic part numbers"
——Hypersemi IGBT discrete replacement cross-reference list: starting with popular models such as IKW50N65EH5 and IHW15N120E1
Engineers working on the domestic substitution of imported IGBTs often do not start their daily work with “I want to choose a domestic IGBT.” Instead, they already have a locked-in imported part number in hand and need to find, in the shortest possible time, a domestic replacement that is package-compatible, parameter-comparable, and supply-verifiable—and then convince themselves and the project team which parameters can be directly aligned after the swap and which must be re-evaluated under actual operating conditions.
On its discrete IGBT product pages, Chaoxing Semiconductor directly provides a “Replace Ref.” field—next to each domestic part number, it lists the corresponding imported reference part number. This effectively moves the starting point of “reverse lookup” from the engineer’s own table-building to the device vendor’s selection entry point. Using several imported discrete IGBTs with the largest market volume and the most concentrated domestic-substitution demand as anchors, this article lists Chaoxing’s comparable domestic part numbers one by one and clarifies three things: whether VCE(sat) can be directly aligned; under what conditions Eon/Eoff need to be re-examined; and why short-circuit withstand, a “hidden parameter,” is the easiest to skip during substitution and yet the one that should least be skipped.
Key Highlights
Highlight 1: For 8 popular imported part numbers, Chaoxing has directly comparable domestic discrete IGBTs. They cover the two most concentrated voltage segments, 650 V and 1200 V, with packages concentrated in the TO-247-3L and TO-247PLUS series, making the substitution entry point clear.
Highlight 2: VCE(sat) is not a matter of “close enough”; it is the first comparison table. In the 650 V segment, Chaoxing has pushed VCE(sat) down to the same order of magnitude as, or even lower than, the imported reference part numbers: HG50T65LX100 at 1.58 V versus IKW50N65EH5, and HG75U65LX100 at 1.56 V versus IKW75N65EH5. If the conduction voltage drop rises noticeably, in continuous-conduction scenarios such as motor drives and PFC it directly translates into temperature rise and efficiency loss—a cost that “cost savings from domestic substitution” cannot offset.
Highlight 3: Short-circuit withstand capability is the item most easily skipped in IGBT substitution due to “datasheet intuition.” The short-circuit withstand time window of an IGBT is typically on the order of 5–10 μs, and motor-drive and traction devices are generally specified at 5–10 μs. Chaoxing’s discrete IGBTs are rated at ≥10 μs short-circuit capability, placing them in the same robustness range as the imported reference part numbers. If, during substitution, only VCE(sat) and Eon/Eoff are compared while short-circuit withstand and the DESAT protection window are not checked, this is equivalent to leaving a safety boundary out of the paper analysis.
Highlight 4: The comparison of Eon/Eoff must be completed under “your operating conditions,” not under the typical values in the datasheet. Switching losses are highly dependent on bus voltage, load current, gate resistance, and junction temperature. At the datasheet level, Chaoxing provides complete specification curves, allowing engineers to first complete a round of “paper-based convergence” during the substitution justification stage and then perform final confirmation on a double-pulse test platform.