How to Interpret the Domestic Replacement of Two Infineon SiC SBDs

1. Two "Benchmark Part Numbers": Infineon CoolSiC's Position in PV Power Stages

When teardown analyses are performed on production BOMs of PV microinverters and string inverters, Infineon CoolSiC SiC SBDs appear in highly concentrated locations. IDH06G65C5 (650V / 6A / TO-220 real2pin, 5th generation) is commonly found in high-voltage-side rectification or auxiliary power stages; IDM10G120C5 (1200V / 10A / TO-252 / DPAK real2pin, 5th generation) appears densely in the boost output rectification stage. In microinverter products from brands such as APsystems, Hoymiles, and Enphase, Infineon MOSFETs paired with SiC diodes are a common combination, with the SiC SBD taking the critical high-voltage rectification position.

This "benchmark part number" effect makes the search behavior for domestic replacement very specific: engineers often do not look broadly for "a 650V SiC SBD," but instead take the IDH06G65C5 or IDM10G120C5 part number directly and compare package, VRRM, IF, and VF. Package and static parameter alignment is certainly the first step, but the fact that an Infineon part number has been repeatedly selected in production units means it has already proven capabilities beyond package alignment through years of field data—surge boundary and high-temperature leakage are precisely the two items most easily masked by "typical value alignment" in domestic replacement.

2. Package Alignment Is the Starting Point: Hypersemi's Comparison Entry

Package and pin definition alignment is the physical prerequisite for all replacement arguments. IDH06G65C5 is a TO-220 real2pin through-hole package, and IDM10G120C5 is a TO-252 (DPAK) real2pin surface-mount package. Hypersemi's SiC SBD product line covers both the 650V / TO-220AC and 1200V / TO-252 tiers, with package forms directly corresponding to these two Infineon part numbers.

Take CR865SX100 as an example: it is a 650V / 8A / VF 1.3V / TO-263 SiC SBD. TO-263 is a surface-mount package, different from the through-hole form of TO-220 real2pin, but within Hypersemi's product portfolio it is a package option in the 650V medium-power tier, suitable for designs transitioning from through-hole to surface-mount or requiring a different thermal path. For scenarios strictly requiring TO-220AC through-hole footprint, Hypersemi offers TO-220AC package options in the 650V tier, with package dimensions aligned to the mounting hole positions and pin spacing of IDH06G65C5. In the 1200V / TO-252 tier, Hypersemi also has model coverage, forming a comparison entry point against the surface-mount footprint of IDM10G120C5.

This table does not express a simple "one part number to one part number" mapping, but rather a replacement logic in which package alignment serves as the entry point while verification must continue deeper.

3. Two Items That Cannot Be Judged by Typical Values Alone: Surge Boundary and High-Temperature Leakage

In its datasheet for IDH06G65C5, Infineon specifies an IFSM (non-repetitive peak surge current) of 54 A and a reverse leakage of 110 μA @ 650 V; IDM10G120C5 has a surge current capability in the 38 A–59 A range, a nominal reverse leakage of 62 μA @ 12 V, and a maximum junction temperature of 175°C. These numbers hold under specific test conditions, but their meaning in a replacement argument needs to be properly decomposed.

High-temperature reverse leakage is the first parameter that cannot be judged by room-temperature typical values alone. The 62 μA of IDM10G120C5 and the 110 μA of IDH06G65C5 are values given under datasheet-specified conditions, while SiC SBD reverse leakage increases with junction temperature. For positions such as microinverter boost output rectification that operate long-term in relatively high case-temperature environments, IR at 125°C or even 150°C is the magnitude that truly corresponds to lifetime risk. If domestic replacement only verifies room-temperature leakage, it implicitly assumes that high-temperature leakage behavior matches the Infineon model—and that assumption itself needs verification. Infineon CoolSiC datasheets provide both high-temperature leakage curves and thermal runaway risk notes precisely because this parameter carries far more weight in high-temperature scenarios than its room-temperature static value.

Surge current boundary is the second parameter easily masked by "typical values." The IFSM of 54 A for IDH06G65C5 corresponds to a 6 A steady-state current, a ratio of about 9×; the IFSM of IDM10G120C5 in the 38–59 A range corresponds to a 10 A steady-state current, a ratio of 3.8–5.9×. Under cloud-shadow recovery and grid disturbance scenarios, the transient current borne by the Boost diode in microinverters and string inverters far exceeds steady state. During replacement, one should not compare only the absolute value of IFSM, but rather compare the domestic candidate's IFSM/IF ratio against the Infineon original on the same dimension—a device with a higher absolute IFSM but also a higher steady-state IF may actually have a tighter relative surge margin. In addition, although E_AS (avalanche energy) is less prominent than IFSM in the public parameters of these models, it describes the energy a device can absorb in a reverse avalanche event and, together with IFSM, forms the two boundaries of transient stress.

4. Executable Sequence for Replacement Verification: From Paper Convergence to Double-Pulse Testing

• Step 1: Package and pin definition confirmation. Confirm that the mounting footprint, pin spacing, and heatsink contact surface of the TO-220AC or TO-252 match the target Infineon part number. This is the physical entry point; without completing this step, subsequent parameter verification has no carrier.
• Step 2: First-round convergence on VRRM / IF / VF. Hypersemi's official SiC diode filtering page supports combined filtering by VRRM, IF, VF, and package. Engineers can converge the candidate range to a manageable magnitude by the target part number's voltage/current/package tier before requesting samples. VF verification requires attention to test conditions: during replacement, the domestic candidate's VF should be compared at the same current and junction temperature conditions as the Infineon original, rather than directly subtracting numbers from different test points on the datasheet.
• Step 3: Boundary confirmation of high-temperature IR and IFSM/IF ratio. Proactively extract reverse leakage at 125°C/150°C and IFSM (and its ratio to steady-state IF) from the datasheets of Hypersemi candidate models, and compare them side by side with the Infineon original under the same conditions. The goal of this round is not "typical values close," but confirming that the domestic candidate still falls within the system safety boundary under worst-case temperature and worst-case transient conditions.
• Step 4: Double-pulse and temperature-rise measurements. After completing paper convergence, perform double-pulse switching waveform comparison and full-load temperature-rise testing on the final candidate. SiC SBDs have no reverse recovery current, so the focus of double-pulse testing shifts to the effect of junction capacitance displacement current on the turn-on waveform and leakage stability at high temperature, rather than the Qrr comparison of the silicon FRD era.

5. The End Point of Replacement Is Not "It Fits," but "It Holds Under the Same Stress"

The popularity of IDH06G65C5 and IDM10G120C5 in microinverters and string inverters is not due to any single parameter being "far ahead," but to the combination of package, static parameters, and long-term reliability that has earned them a place in production BOMs. If domestic SiC SBD replacement focuses only on package alignment and VF benchmarking, it achieves physical feasibility; confirmation of high-temperature leakage and surge boundaries achieves reliability equivalence.

Hypersemi's comparison entries at 650V / TO-220AC and 1200V / TO-252 allow engineers to start with package filtering and complete the first round of paper convergence on the official product page. But the actions after the entry point—proactively pulling high-temperature IR and IFSM/IF ratios from the absolute maximum ratings section and temperature curves, comparing boundaries against the Infineon original, and then proceeding to double-pulse and temperature-rise measurements—are the key to turning "domestic replacement" from a comparison table into a deliverable engineering conclusion. Package alignment is the starting point of replacement; boundary alignment is the end point.

Imported model parameters in this article are based on Infineon official datasheets and public distribution data; Hypersemi model parameters are based on official product pages and datasheets. Replacement decisions should be executed after item-by-item verification of package dimensions, high-temperature leakage, surge boundaries, and system thermal design.