Power Semiconductor Devices & Modules | Hypersemi
Powering Innovation in Power Electronics
Hypersemi delivers advanced SiC, MOSFET, IGBT and Power Module solutions for high-efficiency power and drive applications.
Power Semiconductor Devices & Modules | Hypersemi
Select by Parameter and Duty Cycle — Datasheets Included
The full device and module range is in stock — each model page lists key parameters, package and application notes, so engineers stop digging through PDFs.
5496 models · datasheets available online
Product categories
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Engineering services
From custom chip design to failure analysis — engineering support across the device life cycle.
TechForum
Application notes, selection guides and failure cases — 22 posts in total.
- Trends 3 posts Technology direction, roadmap shifts and market observations in power semiconductors.
- Application Solutions 9 posts Device selection and design insights for real-world application scenarios.
- Selection Guide 5 posts Parameter-by-parameter comparison with actionable selection conclusions.
- Alternative solution 2 posts Drop-in alternatives matched by ratings and package, with concrete cross-reference parts.
- Disassembly report 1 post Teardowns of commercial power devices — internal construction and materials analysis.
- Q&A posting 2 posts Engineering Q&A on selection, testing and failure — describe your duty cycle and we will take a look.
Latest posts
- The Second Threshold in 1500V Photovoltaic Boost Selection 1. 1700V Is an Entry Ticket, Not a Safety CertificateThe DC bus of a 1500V system peaks at approximately 1450V. Following the common ×1.3–1.…
- How to Interpret the Domestic Replacement of Two Infineon SiC SBDs When engineers search for domestic SiC SBDs using Infineon part numbers, their first reaction is usually "same package, similar VF" and they consider the first …
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Energy Storage PCS Efficiency Stuck at 98%: How Much Can SiC SBDs Change?
The key factor for efficiency improvement in the AC/DC and DC/DC power stages of energy storage PCS -- the reverse recovery loss limitation of fast recovery dio…
- Silicon IGBT with SiC SBD: An Overlooked Turn-Off Spike Suppression Path 1. The "Second Source" of Turn-Off Spike: Not the Turn-Off Action Itself, but the Forward Recovery of the Complementary Switch During Turn-OnMost analyses of IG…
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Are the system-level advantages of silicon carbide MOSFETs in high-voltage circuits just because of their fast switching speed?
HyperSemi 1700V & 3300V SiC MOSFETs, low-loss high-speed switching devices for 1500V DC bus photovoltaic, energy storage, motor drive and high-voltage DC/DC app…
- How much electricity is actually lost in a year when an energy storage system’s round-trip efficiency differs by 1%? Each 1-percentage-point gain in round-trip efficiency lets a 100MWh storage station release about several million kWh more electricity per year.…
