Chip Failure Analysis (FA)
Hypersemi provides professional third-party chip failure analysis services. Following a standardized outside-in, non-destructive-first methodology, we combine ATE electrical testing, X-Ray/CT and SAM non-destructive imaging, FIB/SEM cross-sectioning, EMMI/OBIRCH circuit-level localization and SIMS/XPS/AFM material characterization to rapidly pinpoint design flaws, process anomalies and application faults — across functional failures, short circuits, leakage and batch failures — shortening development cycles, improving yield and reducing field failure rates.
Core Capabilities
Electrical Characterization
ATE testing, probe station measurement, I-V curve analysis
Non-Destructive Analysis
NDA
2D/3D X-Ray/CT imaging, infrared thermal imaging, Scanning Acoustic Microscopy (SAM)
Destructive Physical Analysis
DPA
Chemical/laser decapsulation, FIB/SEM cross-sectioning, EDS elemental analysis
Circuit-Level Fault Localization
EMMI / OBIRCH
Emission Microscopy, Optical Beam Induced Resistance Change, E-beam probing
Material & Surface Analysis
SIMS / XPS / AFM
Surface and compositional characterization
Standardized FA Workflow
Outside-in, non-destructive first
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Failure Replication & Electrical Isolation
Based on failure background and ATE testing, replicate the fault, identify abnormal electrical parameters, and narrow down the failure zone.
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Non-Destructive Internal Inspection
Using X-Ray CT, thermal imaging, SAM and other techniques to inspect internal package structure, thermal distribution and interface defects without damage.
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Microscopic Physical & Material Analysis
Precise decapsulation and FIB cross-sectioning; SEM/TEM for nanoscale defects; EDS/SIMS for contamination and compositional analysis.
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Circuit & Device-Level Precision Localization
EMMI and OBIRCH pinpoint leakage, shorts or opens at the transistor or circuit node level.
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Root-Cause Diagnosis & Improvement Recommendations
Correlating electrical, physical and material data to construct failure mechanism models (electromigration, HCI, ESD damage) with actionable improvements.
Technical Strengths & Advantages
- Advanced Equipment Platform Dual-Beam FIB, high-resolution SEM, 3D X-Ray, fully automated probe stations.
- Cross-Node & Packaging Expertise Extensive experience spanning mature nodes to advanced packaging (Flip-Chip, SiP, Fan-Out).
- Expert Engineering Team Projects led by senior engineers with backgrounds in semiconductor physics, device engineering and materials science.
- Standardized & Reliable Process Strict data correlation and sample protection protocols for accurate, dependable results.
Typical Application Scenarios
R&D Phase
Functional anomalies, parametric shifts, reliability test failures
Production & Packaging
Solder ball voids, wire bond fractures, delamination, contamination-related failures
Field Returns & Application Issues
Overvoltage/overcurrent damage, ESD/EOS events, thermal fatigue failures
Reliability Enhancement
Early failure analysis and mechanism study for HTOL, ELFR and other reliability tests
Why Choose Hypersemi?
We are committed to transforming failure analysis into a key driver of product competitiveness. Through precise fault localization, rapid response and in-depth diagnostics, we help clients shorten development cycles, improve yield and reduce field failure rates — safeguarding quality throughout the chip's lifecycle.
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