Zhuhai Hypersemi -1700V / 3300V SiC MOSFETs

In 1500 V DC bus systems, silicon‑based power devices suffer from limited operating‑frequency capability, which results in bulkier and heavier transformers, inductors and heat sinks. Meanwhile, imported high‑voltage SiC devices commonly face long lead‑times and inflexible solution‑locking constraints.

Zhuhai HyperSemi has launched a matrix of 12 SiC MOSFET models covering 1700 V and 3300 V voltage classes. The product portfolio spans from 152 A / 15 mΩ down to 4.8 A / 1000 mΩ. Package options include through‑hole TO‑247‑3L / 4L and surface‑mount TO‑263‑7L. These devices feature intrinsic SiC body diodes and avalanche robustness, supporting parallel operation and simplified gate‑driving. Full‑series datasheets and characteristic curves are available for reference, providing a ready‑to‑evaluate domestic‑alternative solution for photovoltaic inverters, energy‑storage systems, EV chargers and high‑voltage DC/DC converters, enabling fast prototype evaluation and local‑component qualification for engineers.

I. Why high‑voltage SiC is indispensable for power‑conversion designs

Experienced high‑voltage power‑conversion engineers are well aware: for bus voltages above 1000 V, silicon‑based IGBTs exhibit high switching losses and significant tail‑current effects, limiting practical operating frequencies to only several kHz up to a dozen kHz. Consequently, transformers, inductors and heat sinks grow larger and heavier.

To boost switching frequency and shrink overall system size and weight, fundamental device‑level upgrades are required — this is where SiC MOSFETs deliver their core advantages.

Nevertheless, practical component selection frequently hits three pain points: whether device voltage ratings can cover 1500 V‑class systems with sufficient safety margin; whether available packages support both high‑current high‑speed operation and mass‑production surface‑mount assembly; and whether domestic devices provide complete datasheets to support proper derating design.

HyperSemi’s new 1700 V / 3300 V SiC MOSFET family addresses all the above‑mentioned challenges. Founded in 2008, the core team has deep expertise in power semiconductors across power modules, SiC devices, IGBTs, MOSFETs and diodes. This new family consists of 12 models with current ratings from 3.8 A to 152 A and on‑resistance ranging from 15 mΩ to 1000 mΩ. Engineers can quickly perform preliminary device selection based on system bus voltage and operating current.

Device Selection Table

Two distinct product platforms can be identified from the table above:

• The 1700 V platform covers a broad current range from 4.8 A to 152 A. It is well‑suited for 1500 V DC‑bus applications including photovoltaic inverters, energy‑storage converters, motor drives, PFC circuits and high‑voltage DC/DC converters.
• The 3300 V platform targets motor drives, special‑grade photovoltaic systems and high‑voltage battery‑charging applications requiring enhanced voltage safety margins.
• Note: Values listed in the table are nominal device parameters. Real‑world design must re‑verify performance considering operating junction temperature, switching frequency, derating factors and thermal conditions.

II. Key pain points solved by HyperSemi SiC MOSFETs

1. High blocking voltage plus low on‑resistance

Within each voltage class, these devices deliver high blocking capability together with low on‑resistance. The 1700 V platform achieves RDS(on) as low as 15 mΩ, balancing conduction loss and voltage safety margin. Designers no longer need to compromise between “barely‑sufficient voltage rating” and “generous derating margin”.

2. Low‑capacitance high‑speed switching

Featuring low input / output / reverse‑transfer capacitance (low Ciss / Coss / Crss) combined with low gate charge Qg, the devices reduce both gate‑drive losses and switching losses. Higher switching frequencies become feasible, allowing downsizing of magnetic components.

3. Kelvin‑source packages

TO‑247‑4L and TO‑263‑7L Kelvin‑source packages provide dedicated drive‑source pins. This electrically decouples the gate‑drive loop from source parasitic inductance in the main power loop. Under high‑current high‑speed switching conditions, gate‑signal integrity improves, suppressing oscillation and false‑turn‑on risks. The TO‑263‑7L surface‑mount variant supports automated SMT assembly for mass production.

4. Avalanche robustness & intrinsic SiC body‑diode

The intrinsic body diode exhibits excellent reverse‑recovery performance. For certain freewheeling‑current operating conditions, external SiC freewheeling diodes can be eliminated to simplify the BOM.

5. Easy paralleling & simple gate‑driving

The full family supports straightforward parallel‑connection and simple driving schemes. Datasheets specify gate‑voltage operating windows and internal gate‑resistor values. Standard off‑the‑shelf SiC gate drivers are directly compatible. Minimal tuning effort is required when paralleling multiple devices for higher current capability.

6. Wide‑temperature‑range performance

Output‑characteristic curves cover −55 °C, 25 °C and maximum junction‑temperature conditions. High‑power models reach 175 °C maximum junction temperature; low‑power models are rated to 150 °C (refer to respective datasheets for exact limits). Comprehensive temperature‑dependent characteristics support outdoor and high‑temperature‑enclosure industrial applications.

For industrial‑product engineers this is highly practical: RDS(on) rises and VGS(th) shifts at elevated temperatures. Without full‑temperature‑range characteristic curves, device derating and thermal design would rely purely on empirical estimation, undermining system reliability.

Taken together, the value of SiC MOSFETs goes far beyond the marketing slogan “fast switching”. It forms a quantifiable engineering closed‑loop: low Qg reduces drive losses; low parasitic capacitances cut switching losses; low RDS(on) lowers conduction losses; Kelvin‑source packages damp oscillations and improve EMI behaviour; intrinsic body‑diodes reduce external component count and simplify BOM. The system‑level benefits are higher operating frequency, smaller magnetics, reduced heat‑sink size and lower overall system cost. Every datasheet feature corresponds to a practical real‑circuit engineering challenge.

III. Device‑selection guidance

For 1500 V DC‑bus systems, prioritise the 1700 V series:

For high‑power photovoltaic / energy‑storage main‑power stages: select high‑current TO‑247‑4L models such as CM170R015L4X100 (152 A / 15 mΩ), CM170R026L4X100 (100 A / 26 mΩ), CM170R040L4X100 (85 A / 40 mΩ).

For PFC circuits, EV chargers and medium‑to‑low‑power DC/DC converters: choose according to operating current between CM170R072LX100 (40 A / 72 mΩ) and surface‑mount CM170R800SEX100 (6.8 A / 800 mΩ).

For auxiliary‑power and high‑voltage low‑power applications: three 1000 mΩ variants (CM170R1KL4X100 / CM170R1KLX100 / CM170R1KSEX100) cover both through‑hole and SMT form‑factors.

When extra bus‑voltage safety margin is required, adopt the 3300 V product family.