Chip Failure Analysis (FA)

Chip Failure Analysis (FA) is a critical discipline for ensuring product reliability and improving yield. Faced with challenges like functional failure, short circuits, leakage, or batch failures, HyperSemi delivers comprehensive root-cause analysis solutions. Leveraging a systematic approach, state-of-the-art equipment, and a team of seasoned experts, we help clients pinpoint design flaws, process issues, and application faults, enabling rapid problem closure and product enhancement.

Core Capabilities

We offer full-spectrum failure analysis services covering the entire chip lifecycle, including:

• Electrical Characterization: ATE testing, probe station measurement, I-V curve analysis

• Non-Destructive Analysis (NDA): 2D/3D X-Ray/CT imaging, infrared thermal imaging, Scanning Acoustic Microscopy (SAM)

• Destructive Physical Analysis (DPA): Chemical/laser decapsulation, FIB/SEM cross-sectioning, EDS elemental analysis

• Circuit-Level Fault Localization: Emission Microscopy (EMMI), Optical Beam Induced Resistance Change (OBIRCH), E-beam probing

• Material & Surface Analysis: SIMS, XPS, AFM for surface and compositional characterization

Standardized FA Workflow

We adhere to a systematic "outside-in, non-destructive first" methodology:

• Failure Replication & Electrical Isolation
  Based on failure background and ATE testing, we replicate the fault, identify abnormal electrical parameters, and narrow down the failure zone.

• Non-Destructive Internal Inspection
  Using X-Ray CT, thermal imaging, SAM, and other techniques, we inspect internal package structure, thermal distribution, and interface defects without causing damage.

• Microscopic Physical & Material Analysis
  We perform precise decapsulation and FIB cross-sectioning, utilize SEM/TEM to observe nanoscale defects, and employ EDS/SIMS for contamination and compositional analysis.

• Circuit & Device-Level Precision Localization
  Advanced techniques like EMMI and OBIRCH are applied to pinpoint faults such as leakage, shorts, or opens at the transistor or circuit node level.

• Root-Cause Diagnosis & Improvement Recommendations
  Correlating electrical, physical, and material data, we construct failure mechanism models (e.g., electromigration, HCI, ESD damage) and provide actionable improvements for design, process, or application.

Technical Strengths & Advantages

• Advanced Equipment Platform: Features Dual-Beam FIB, high-resolution SEM, 3D X-Ray, fully automated probe stations, and more.

• Cross-Node & Packaging Expertise: Extensive experience spanning mature nodes to advanced packaging (Flip-Chip, SiP, Fan-Out).

• Expert Engineering Team: Projects are led by senior engineers with backgrounds in semiconductor physics, device engineering, and materials science.

• Standardized & Reliable Process: Implements strict data correlation and sample protection protocols to ensure accurate, dependable results.

Typical Application Scenarios

• R&D Phase: Functional anomalies, parametric shifts, reliability test failures

• Production & Packaging: Solder ball voids, wire bond fractures, delamination, contamination-related failures

• Field Returns & Application Issues: Overvoltage/overcurrent damage, ESD/EOS events, thermal fatigue failures

• Reliability Enhancement: Early failure analysis and mechanism study for HTOL, ELFR, and other reliability tests

Why Choose Hypersemi?

We are committed to transforming failure analysis into a key driver of product competitiveness. Through precise fault localization, rapid response, and in-depth diagnostics, we help clients shorten development cycles, improve yield, and reduce field failure rates, safeguarding quality throughout the chip's lifecycle.

Keywords: Chip Failure Analysis, Yield Improvement, Reliability Testing, Fault Isolation, EMMI, FIB, SEM, X-Ray CT, Decapsulation, Cross-Section Analysis, ESD Damage, Electromigration, Package Failure, Root Cause Analysis.

To learn more or discuss collaboration, please contact us via: info@hypersemi.com.cn