珠海超星半导体有限公司

The next-generation 1200V silicon carbide (SiC) Schottky diode adopts a merged PIN Schottky (MPS) structure design, offering high surge current protection capability, low forward voltage drop, low capacitive charge, and minimal reverse leakage current. These characteristics contribute to enhanced efficiency and reliability in switching power supply designs.

Silicon Carbide (SiC), as a third-generation semiconductor material, exhibits characteristics such as high power capacity, low energy loss, high reliability, and efficient heat dissipation. It is suitable for high-voltage applications exceeding 1200 volts and harsh operating conditions. SiC is widely used in high-power fields, including large transportation systems (e.g., wind power, railways), solar inverters, uninterruptible power supply (UPS) systems, smart grids, and power supply units. Its applications cover the majority of sectors aligned with the "New Infrastructure" initiative.