珠海超星半导体有限公司

The next-generation 1200V silicon carbide (SiC) Schottky diode adopts a merged PIN Schottky (MPS) structure design, offering high surge current protection capability, low forward voltage drop, low capacitive charge, and minimal reverse leakage current. These characteristics contribute to enhanced efficiency and reliability in switching power supply designs.

Thanks to the MPS structure—which utilizes laser annealing and backside thinning technology—the diode's capacitive charge is reduced to as low as 28nC, while the forward voltage drop is decreased to 1.35V. Additionally, the typical reverse leakage current of the device at 25°C is only 2.5μA, thereby reducing conduction losses and ensuring high energy efficiency during light-load and no-load operation. Unlike ultra-fast recovery diodes, this third-generation device exhibits almost no reverse recovery tail current, further improving efficiency.

Typical applications of SiC diodes include AC/DC power factor correction (PFC) and DC/DC ultra-high-frequency output rectification in FBPS and LLC converters. They are suitable for use in photovoltaic inverters, energy storage systems, industrial drives and tools, data centers, and other related fields.