Power Device Test Engineer

Responsibilities

• Static parameter testing (Vth, Rds(on), Vce(sat), Vf, BVdss) and dynamic parameter testing (Eon/Eoff, Qrr, trr, switching times) of MOSFET, IGBT and SiC devices;
• Build and maintain power device test platforms, and write test programs and specifications;
• Execute reliability tests (HTRB, HTGB, H3TRB, TC, power cycling) and issue reports;
• Analyse test data, identify abnormal lots and failure modes, and drive process or design improvements;
• Support the application team in validating customer samples and locating issues;
• Calibrate and maintain test equipment (oscilloscopes, electronic loads, semiconductor parameter analysers, dynamic parameter test systems).

Requirements

• Bachelor's degree or higher in Microelectronics, Electronic Engineering, Electrical Engineering, Automation or related fields;
• 2+ years of semiconductor device testing or failure analysis experience; power device testing experience is preferred;
• Familiarity with power device parameter definitions and test methods (static, dynamic, avalanche, short-circuit, etc.);
• Ability to independently operate oscilloscopes, power supplies, electronic loads and semiconductor parameter analysers;
• Knowledge of reliability test standards (JEDEC, AEC-Q101, IEC) is preferred;
• Meticulous and rigorous, with strong data analysis and issue-tracking skills.

Work location: Zhuhai, Guangdong, China