Power Device Design Engineer
Bachelor's degree
· 2 min read
Structural design, simulation and tape-out verification of MOSFET, IGBT and SiC power devices. Work location: Zhuhai.
Responsibilities
- Structural and parametric design of power semiconductor devices including MOSFETs, IGBTs and SiC diodes/MOSFETs;
- Device electrical simulation and structural optimisation using TCAD (Sentaurus / Silvaco);
- Define layout design rules and work with layout engineers on device layout drawing and verification;
- Define tape-out plans, track wafer fabrication and complete electrical characterisation and data analysis for first silicon;
- Analyse device failure mechanisms (breakdown, conduction loss, thermal failure, reliability) and propose improvements;
- Write design documents, simulation reports and test specifications, and provide device parameter support to the application team.
Requirements
- Bachelor's degree or higher in Microelectronics, Semiconductor Physics, Electronic Science and Technology, Materials or related fields;
- 2+ years of power device design experience; experience in volume production of power MOSFETs, IGBTs or SiC devices is preferred;
- Familiarity with power device operating principles and key parameters (Vth, Rds(on), Vce(sat), Eon/Eoff, Qrr, Vf, etc.);
- Proficiency in TCAD simulation tools and device parameter extraction/analysis methods;
- Knowledge of power device fabrication processes (lithography, etching, implantation, passivation, metallisation) is preferred;
- Strong technical writing skills and teamwork ability.
Work location: Zhuhai, Guangdong, China