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Induction Heating — How IGBTs Drive the Powerful Performance of Commercial Induction Cookers

2025-09-16 14:31:00
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Commercial induction cookers operate based on the principle of electromagnetic induction: they convert utility-frequency AC power into high-frequency AC power (typically 20-40 kHz), generating an alternating magnetic field through the excitation coil. This field induces eddy currents in the metal cookware base, causing it to heat up.


In this power conversion process, the IGBT discrete device acts as a high-speed switch. By frequently and rapidly switching on and off, it converts direct current into high-frequency alternating current. Its switching performance (e.g., speed, losses) directly impacts the appliance’s heating efficiency, power regulation accuracy, and temperature control.


Working Topology: IGBTs in Half-Bridge Resonant Structures
Currently, mainstream commercial induction cookers widely adopt the half-bridge series resonant topology. This structure offers high efficiency and flexible control, making it an ideal choice to leverage the performance of IGBTs. The basic topology is as follows:

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Working Process Analysis:

  1. Rectification and Filtering

    Mains electricity is rectified via a bridge rectifier and filtered by high-capacity capacitors to obtain smooth DC voltage (Vdc).
  2. High-Frequency Inversion

    Two HG30T135TPX100 IGBT discrete devices alternately conduct (complementary switching) under the control of drive signals, converting DC power into square-wave AC power.
  3. LC Resonance

    The square-wave voltage is applied to a series resonant circuit consisting of an excitation coil (equivalent inductance L) and a resonant capacitor (C).When the switching frequency approaches the resonant frequency, the circuit resonates, generating high-amplitude high-frequency current in the coil. This creates a strong alternating magnetic field for heating.
  4. Power Regulation

    By finely adjusting the IGBTs’ switching frequency (via pulse width modulation), the circuit is tuned to deviate from or approach the resonant point, enabling seamless and continuous output power control.


Hypersemi HG30T135TPX100 IGBT Outstanding Features:
  1. Low Saturation Voltage (Vce(sat))

    Only 2.3V (at Tj=25°C) / 2.8V (at Tj=150°C), reducing conduction losses for higher efficiency and lower heat generation.

  2. Low Switching Losses (Eon/Eoff)

    Optimized switching characteristics (Eon=3.0mJ, Eoff=1.5mJ @25°C), suitable for high-frequency operation and minimizing heat dissipation challenges.
  3. High Short-Circuit Withstand Capability (tsc=10μs)

    Provides sufficient time for protection circuits to activate during abnormalities (e.g., dry heating of cookware), preventing catastrophic failures.
  4. Fast Soft Recovery Diode (FRD)

    Low reverse recovery charge (Qrr) of the built-in diode effectively suppresses turn-off voltage spikes and oscillations, reducing EMI and enhancing reliability.
  5. Low Thermal Resistance (RthJC=0.36K/W)

    Excellent thermal conductivity slows junction temperature rise, enabling prolonged high-temperature operation and extended lifespan.


More inverter parts:

power

Package

650V

1200V

500V-5000W

TO-247

HG75T65LX100

HG25T120LX100


HG30T135LX100


HG40T120LX100

TO-3PN


HG25T120TPX100


HG30T135TPX100


HG40T120TPX100

10KW-30KW

34MM

HGF75MA65X100

HGF75MA120X100


HGF100MA120X100


HGF150MA120X100

62MM


HGF150MB120X100


HGF200MB120X100


HGF300MB120X100

Auxiliary circuit section:

Product

Parameter

Rectifier Bridge

2A~35A,50V~1000V

TVS

400W~50KW,5.0V~550V

Rectifier diode

0.2A~10A,50V~5000V

Fast Recovery diode

0.2A~6A,50V~5000V

Super fast recovery diode

1A~6A,50V~1000V

Schottky diode

0.25A~8A,20V~210V

Power diode

7A~30A,20V~150V

Zener Diode

1.8V~200V

Switching diode

20V~75V


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