HSC98N12TFI8-IGBT wafer-1200V-100A-1.85V

Home Products Wafer IGBT wafer

HSC98N12TFI8

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1200V

IC(A)：100A

VCES(sat)(V)：1.85V

VGEth(V)：5.8V

MOQ：1

Size(mm)：9.88*9.88mm

Save to list Quick Enquiry Datasheet Request sample

Product overview

HSC98N12TFI8-IGBT wafer, VCES: 1200V, IC: 100A, VCEsat: 1.85V, VGEth: 5.8V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.

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