HSC93N12I8UB
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1200V
IC(A):180A
VCES(sat)(V):1.7V
VGEth(V):5V
MOQ:1
Size(mm):11.50*8.10mm
Product overview
HSC93N12I8UB-IGBT wafer, VCES: 1200V, IC: 180A, VCEsat: 1.7V, VGEth: 5V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
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