HSC43N12TFI8_C-IGBT wafer-1200V-40A-1.74V

Home Products Wafer IGBT wafer

HSC43N12TFI8_C

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1200V

IC(A)：40A

VCES(sat)(V)：1.74V

VGEth(V)：5.76V

MOQ：1

Size(mm)：6.48*6.48mm

Save to list Quick Enquiry Datasheet Request sample

Product overview

HSC43N12TFI8_C-IGBT wafer, VCES: 1200V, IC: 40A, VCEsat: 1.74V, VGEth: 5.76V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.

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