HSC19N07TFI8_B
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):650V
IC(A):50A
VCES(sat)(V):1.7V
VGEth(V):5V
MOQ:1
Size(mm):4.38*4.38mm
Product overview
HSC19N07TFI8_B-IGBT wafer, VCES: 650V, IC: 50A, VCEsat: 1.7V, VGEth: 5V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
Featured products
Downloads
Free samples








