HSC192N17I12LD
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1700V
IC(A):200A
VCES(sat)(V):2V
VGEth(V):5.8V
MOQ:
Size(mm):16*11.99mm
Product overview
HSC192N17I12LD-IGBT wafer, VCES: 1700V, IC: 200A, VCEsat: 2V. Datasheet & samples available — contact us for price & lead time.
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