HSC192N17I12LD-IGBT wafer-1700V-200A-2V

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HSC192N17I12LD

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1700V

IC(A)：200A

VCES(sat)(V)：2V

VGEth(V)：5.8V

MOQ：1

Size(mm)：16.00*11.99mm

Save to list Quick Enquiry Datasheet Request sample

Product overview

HSC192N17I12LD-IGBT wafer, VCES: 1700V, IC: 200A, VCEsat: 2V, VGEth: 5.8V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.

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