HSC131N12I8LA-IGBT wafer-1200V-150A-1.67V

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HSC131N12I8LA

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1200V

IC(A)：150A

VCES(sat)(V)：1.67V

VGEth(V)：6.02V

MOQ：1

Size(mm)：11.78*11.18mm

Save to list Quick Enquiry Datasheet Request sample

Product overview

HSC131N12I8LA-IGBT wafer, VCES: 1200V, IC: 150A, VCEsat: 1.67V, VGEth: 6.02V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.

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