HSC112N17I8LA-IGBT wafer-1700V-150A-1.7V

Home Products Wafer IGBT wafer

HSC112N17I8LA

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1700V

IC(A)：150A

VCES(sat)(V)：1.7V

VGEth(V)：6.2V

MOQ：1

Size(mm)：10.58*10.58mm

Save to list Quick Enquiry Datasheet Request sample

Product overview

HSC112N17I8LA-IGBT wafer, VCES: 1700V, IC: 150A, VCEsat: 1.7V, VGEth: 6.2V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.

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