HSC112N17I8LA
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1700V
IC(A):150A
VCES(sat)(V):1.67V
VGEth(V):6.5V
MOQ:
Size(mm):10.58*10.58mm
Product overview
HSC112N17I8LA-IGBT wafer, VCES: 1700V, IC: 150A, VCEsat: 1.67V. Datasheet & samples available — contact us for price & lead time.
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