HSC107N12TFI8-IGBT wafer-1200V-110A-2V

Home Products Wafer IGBT wafer

HSC107N12TFI8

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1200V

IC(A)：110A

VCES(sat)(V)：2V

VGEth(V)：5.7V

MOQ：1

Size(mm)：14.61*7.30mm

Save to list Quick Enquiry Datasheet Request sample

Product overview

HSC107N12TFI8-IGBT wafer, VCES: 1200V, IC: 110A, VCEsat: 2V, VGEth: 5.7V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.

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