HSC100N06TFI8
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):600V
IC(A):200A
VCES(sat)(V):1.85V
VGEth(V):5.3V
MOQ:1
Size(mm):10.23*9.73mm
Product overview
HSC100N06TFI8-IGBT wafer, VCES: 600V, IC: 200A, VCEsat: 1.85V, VGEth: 5.3V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
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